Title :
An intrinsic base resistance model for low and high currents
Author :
Jo, Myungsuk ; Burk, Dorothea E.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
1/1/1990 12:00:00 AM
Abstract :
A highly physical model of the intrinsic base resistance for a bipolar junction transistor, which includes emitter crowding, base pushout, and conductivity modulation and is compatible with the charge-based large-signal bipolar transistor model, is presented. This model, which is an extension of the Hauser model, is derived from a power dissipation calculation and verified with PISCES simulations of the low- to high-current region. It is then implemented in SLICE for CAD
Keywords :
CAD; bipolar transistors; electronic engineering computing; semiconductor device models; CAD; Hauser model; PISCES simulations; SLICE; base pushout; bipolar junction transistor; charge-based large-signal bipolar transistor model; conductivity modulation; emitter crowding; high currents; intrinsic base resistance model; low currents; Bipolar transistor circuits; Bipolar transistors; Boundary conditions; Conductivity; Diodes; Equations; Frequency response; Power dissipation; Switching circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
