Title :
The effect of field dependent emission on the current-voltage characteristics of a p+-p--p+ Si:Au:B device
Author :
Jang, Sheng-Lyang ; Bosman, Gijs
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
1/1/1990 12:00:00 AM
Abstract :
The current-voltage characteristics of a silicon p+-p --p+ device doped with boron and gold which showed sublinear behavior at moderately high fields are discussed. With the use of low-frequency voltage noise data measured as a function of electric field, it was determined that the sublinear current-voltage characteristics are caused by a decrease in the hole concentration with increasing electric field. This decrease is caused by a field-induced decrease in the hole emission coefficient, which is larger than the associated field induced decrease in the hole capture coefficient
Keywords :
boron; carrier mobility; elemental semiconductors; gold; high field effects; semiconductor devices; silicon; Si:Au,B; current-voltage characteristics; electric field; field dependent emission; hole capture coefficient; hole concentration; hole emission coefficient; low-frequency voltage noise data; moderately high fields; p+-p--p+ Si:Au:B device; sublinear current-voltage characteristics; Boron; Current measurement; Current-voltage characteristics; Gold; Hot carriers; Noise measurement; Semiconductor device noise; Silicon; Temperature measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
