The effect of field dependent emission on the current-voltage characteristics of a p⁺-p^--p⁺ Si:Au:B device

Author

Jang, Sheng-Lyang ; Bosman, Gijs

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

37

Issue

1

fYear

1990

fDate

1/1/1990 12:00:00 AM

Firstpage

222

Lastpage

226

Abstract

The current-voltage characteristics of a silicon p⁺-p ^--p⁺ device doped with boron and gold which showed sublinear behavior at moderately high fields are discussed. With the use of low-frequency voltage noise data measured as a function of electric field, it was determined that the sublinear current-voltage characteristics are caused by a decrease in the hole concentration with increasing electric field. This decrease is caused by a field-induced decrease in the hole emission coefficient, which is larger than the associated field induced decrease in the hole capture coefficient

Keywords

boron; carrier mobility; elemental semiconductors; gold; high field effects; semiconductor devices; silicon; Si:Au,B; current-voltage characteristics; electric field; field dependent emission; hole capture coefficient; hole concentration; hole emission coefficient; low-frequency voltage noise data; moderately high fields; p⁺-p^--p⁺ Si:Au:B device; sublinear current-voltage characteristics; Boron; Current measurement; Current-voltage characteristics; Gold; Hot carriers; Noise measurement; Semiconductor device noise; Silicon; Temperature measurement; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.43819

Filename

43819

The effect of field dependent emission on the current-voltage characteristics of a p+-p--p+ Si:Au:B device

Jang, Sheng-Lyang ; Bosman, Gijs

jour

The effect of field dependent emission on the current-voltage characteristics of a p⁺-p^--p⁺ Si:Au:B device