Title :
Amorphisation and low temperature recrystallisation of InP
Author :
Wrick, V.L. ; Choyke, W.J. ; Tzeng, C.F.
Author_Institution :
Westinghouse Research & Development Center, Pittsburgh, USA
Abstract :
Fe-doped semi-insulating samples of InP have been implanted at room temperature and liquid nitrogen temperature at 200 KV with phosphorous. A fluence of 5 × 1014/cm2 was sufficient to render the lattice amorphous as determined by Rutherford backscattering techniques. Successful reconstruction of the damaged lattice was achieved using a 400°C anneal for 24 h on samples implanted at liquid nitrogen temperatures.
Keywords :
III-V semiconductors; amorphisation; amorphous semiconductors; annealing; indium compounds; ion implantation; recrystallisation; Fe doped; InP; P implantation; Rutherford backscattering techniques; amorphisation; annealing; ion implantation; low temperature recrystallisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810529
