Evaluation of multiquantum barriers in bulk double heterostructure visible laser diodes

Author

Morrison, A.P. ; Lambkin, J.D. ; van der Poel, C.J. ; Valster, A.

Author_Institution

Nat. Microelectron. Res. Centre, Cork, Ireland

Volume

8

Issue

7

fYear

1996

fDate

7/1/1996 12:00:00 AM

Firstpage

849

Lastpage

851

Abstract

Three bulk (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P double heterostructure (DH) lasers were designed and fabricated to examine the effect of incorporating multiquantum barrier (MQB) structures. The first laser, used as a reference, has a conventional structure, while the remaining lasers include MQB structures, one designed to achieve a virtual barrier of 75 meV, the other having a transmission window up to 100 meV above the bulk barrier height. Measurements show a reduction of up to 31% in the room temperature threshold current and an increase in characteristic temperature of 20 K by the inclusion of the optimized MQB structure in comparison with the reference laser. However, since the leaky MQB design also shows a significant room temperature improvement over the reference laser we suggest that the device improvements produced by the MQB structures are not solely due to the formation of a virtual barrier.

Keywords

Debye temperature; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P double heterostructure lasers; 100 meV; 20 K; 75 meV; AlGaInP; MQB structures; bulk barrier height; bulk double heterostructure visible laser diodes; characteristic temperature; leaky MQB design; multiquantum barrier structures; multiquantum barriers; optimized MQB structure; reference laser; room temperature; room temperature threshold current; transmission window; virtual barrier; DH-HEMTs; Diode lasers; Electrons; Laboratories; Laser transitions; Optical design; Optical losses; Optical superlattices; Temperature; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.502247

Filename

502247