Title :
Temperature dependence of the transferred electron threshold current in In1¿xGaxAsyP1¿y
Author :
Heasman, K.C. ; Hayes, J.R. ; Adams, A.R. ; Greene, P.D.
Author_Institution :
University of Surrey, Department of Physics, Guildford, UK
Abstract :
The threshold current for transferred electron effects in In1¿xGaxAsyP1¿y (0.4 <y = 2.1x <0.9) has been found to increase on cooling from 300 K to 77 K at a rate which is only about one-third of the corresponding rate for GaAs. This suggests that alloy scattering remains effective at high fields.
Keywords :
Gunn effect; III-V semiconductors; gallium arsenide; indium compounds; 300K to 77K; In1-xGaxAsyP1-y; alloy scattering; semiconductor; temperature dependence; transferred electron threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810531
