Title :
Strain compensated InGaAs-GaAsP-InGaP laser
Author :
Dutta, N.K. ; Hobson, W.S. ; Vakhshoori, D. ; Han, H. ; Freeman, P.N. ; de Jong, J.F. ; Lopata, J.
Author_Institution :
Lucent Technol. Inc., AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
7/1/1996 12:00:00 AM
Abstract :
The performance characteristics of InGaAs-GaAsP-InGaP strain compensated laser emitting near 1 μm are reported. The ridge waveguide lasers have room temperature threshold current of 18 mA and differential quantum efficiency of 0.45 W/A/facet. The linewidth enhancement factor is smaller and gain coefficient is larger for these strain compensated lasers compared to that for conventional strained layer laser. This may be due to higher effective compressive strain in the light emitting layer of these devices which reduces the effective mass. The observed larger gain coefficient is consistent with the measured larger relaxation oscillation frequency of these lasers compared to that for a conventional strained layer laser.
Keywords :
III-V semiconductors; compensation; deformation; gallium arsenide; gallium compounds; indium compounds; infrared sources; ridge waveguides; semiconductor lasers; spectral line breadth; waveguide lasers; 1 mum; 18 mA; InGaAs-GaAsP-InGaP; InGaAs-GaAsP-InGaP strain compensated laser; differential quantum efficiency; effective mass; gain coefficient; higher effective compressive strain; light emitting layer; linewidth enhancement factor; performance characteristics; relaxation oscillation frequency; ridge waveguide lasers; room temperature threshold current; strain compensated InGaAs-GaAsP-InGaP laser; strain compensated lasers; strained layer laser; Capacitive sensors; Chemical lasers; Gain measurement; Gallium arsenide; Lattices; Quantum well devices; Strain measurement; Threshold current; Waveguide lasers; X-ray lasers;
Journal_Title :
Photonics Technology Letters, IEEE
