Title :
Low-threshold lasing in novel microdisk geometries
Author :
Corbett, B. ; Justice, J. ; Considine, L. ; Walsh, S. ; Kelly, W.M.
Author_Institution :
Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
fDate :
7/1/1996 12:00:00 AM
Abstract :
We have fabricated arrays of semiconductor microdisks with diameters from 3.5-9 μm using wet chemical etching in combination with epitaxial lift-off and metallic bonding techniques. The microdisks are supported on glass for higher optical confinement and to allow novel annular geometries. The optically pumped microdisks have high-Q (>2000) modes, low-pump thresholds (<20 μW) and multimode lasing at liquid nitrogen temperatures. Successive modes are excited by temperature tuning the bandgap.
Keywords :
III-V semiconductors; energy gap; epitaxial growth; etching; gallium arsenide; indium compounds; laser modes; laser tuning; optical fabrication; optical films; quantum well lasers; semiconductor growth; semiconductor laser arrays; 20 muW; 3.5 to 9 mum; InGaAs; InGaAs QW active layer; annular geometries; bandgap; epitaxial lift-off; high-Q modes; liquid nitrogen temperatures; low-pump thresholds; low-threshold lasing; metallic bonding techniques; microdisk geometries; multimode lasing; optical confinement; optically pumped microdisks; semiconductor microdisk laser arrays; temperature tuning; wet chemical etching; Bonding; Chemicals; Geometrical optics; Geometry; Glass; Nitrogen; Optical pumping; Optical tuning; Temperature; Wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
