Title :
Temperature effect on low threshold voltage ion-implanted GaAs MESFETs
Author :
Lee, S.J. ; Lee, Charlotte P.
Author_Institution :
Rockwell International, Microelectronics Research & Development Center, Thousand Oaks, USA
Abstract :
The temperature dependence of the characteristics of ion-implanted GaAs MESFETs has been studied. The observed effects are mainly due to the p-n-junction-loke interface between the channel active layer and the semi-insulatning substrate. Good agreement between theoretical calculations and the experimental results is obtained.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; channel active layer; ion-implanted GaAs MESFETs; low threshold voltage; p-n-junction-loke interface; semi-insulating substrate; temperature dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810534
