• DocumentCode
    973809
  • Title

    Temperature effect on low threshold voltage ion-implanted GaAs MESFETs

  • Author

    Lee, S.J. ; Lee, Charlotte P.

  • Author_Institution
    Rockwell International, Microelectronics Research & Development Center, Thousand Oaks, USA
  • Volume
    17
  • Issue
    20
  • fYear
    1981
  • Firstpage
    760
  • Lastpage
    761
  • Abstract
    The temperature dependence of the characteristics of ion-implanted GaAs MESFETs has been studied. The observed effects are mainly due to the p-n-junction-loke interface between the channel active layer and the semi-insulatning substrate. Good agreement between theoretical calculations and the experimental results is obtained.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; channel active layer; ion-implanted GaAs MESFETs; low threshold voltage; p-n-junction-loke interface; semi-insulating substrate; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810534
  • Filename
    4246013
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=973809