Title :
Multiwavelength, densely-packed 2 x 2 vertical-cavity surface-emitting laser array fabricated using selective oxidation
Author :
Huffaker, D.L. ; Deppe, D.G.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
7/1/1996 12:00:00 AM
Abstract :
Data are presented characterizing an individually addressable, multiwavelength 2×2 vertical-cavity surface-emitting laser array. The individual elements are fabricated on center-to-center spacings of 12 μm with the lasing wavelengths controlled through the selectively oxidized lateral device sizes. Devices sized 3.5, 3.0, 2.5, and 2.0 μm result in lasing wavelengths of 9608, 9598, 9587, and 9574 /spl Aring/, respectively. Continuous wave threshold currents of the four elements with decreasing device sizes are 240, 214, 187, and 169 μA, respectively.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; surface emitting lasers; 169 A; 187 A; 2 mum; 2.5 mum; 214 A; 240 A; 3 mum; 3.5 mum; 9574 A; 9587 A; 9598 A; 9608 A; InGaAs; center-to-center spacings; continuous wave threshold currents; lasing wavelengths; multiwavelength 2/spl times/2 vertical-cavity surface-emitting laser array; multiwavelength densely-packed 2/spl times/2 vertical-cavity surface-emitting laser array; selective oxidation; selectively oxidized lateral device sizes; Distributed Bragg reflectors; Frequency; Gallium arsenide; Optical arrays; Oxidation; Power lasers; Size control; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
