• DocumentCode
    973820
  • Title

    Interface states in MOSFETs due to hot-electron injection determined by the charge pumping technique

  • Author

    Schmitt, Dietmar ; Dorda, G.

  • Author_Institution
    Siemens AG, Research Laboratories, Mÿnchen, West Germany
  • Volume
    17
  • Issue
    20
  • fYear
    1981
  • Firstpage
    761
  • Lastpage
    763
  • Abstract
    The charge pumping technique is used to characterise interface states in MOSFETs created by hot-electron injection. Donor states near the middle of the bandgap are identified. Two independent methods to determine the location of these states are presented.
  • Keywords
    hot carriers; insulated gate field effect transistors; interface electron states; MOSFETs; charge pumping technique; donor states; hot-electron injection; interface states;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810535
  • Filename
    4246014
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=973820