Title :
Interface states in MOSFETs due to hot-electron injection determined by the charge pumping technique
Author :
Schmitt, Dietmar ; Dorda, G.
Author_Institution :
Siemens AG, Research Laboratories, Mÿnchen, West Germany
Abstract :
The charge pumping technique is used to characterise interface states in MOSFETs created by hot-electron injection. Donor states near the middle of the bandgap are identified. Two independent methods to determine the location of these states are presented.
Keywords :
hot carriers; insulated gate field effect transistors; interface electron states; MOSFETs; charge pumping technique; donor states; hot-electron injection; interface states;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810535
