Title :
GaAs digital integrated circuits for very high-speed frequency division
Author :
Gloanec, M. ; Jarry, J. ; Nuzillat, G.
Author_Institution :
Thomson-CSF, Central Research Laboratory, Orsay, France
Abstract :
Dual- and single-clocked frequency dividers, consisting of normally-on GaAs MESFET integrated circuits, with maximum toggle frequency of 5.7 GHz, were fabricated. The gate length was 0.8 ¿m and an E-beam direct writing processing technology was used. Some improvements, such as reduction of the gate length and adoption of a double pinchoff voltage technology, would make possible the implementation of a counter family with a maximum operating frequency in the range 5¿7 GHz.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; digital integrated circuits; field effect integrated circuits; frequency dividers; gallium arsenide; 5 to 7 GHz; E-beam direct writing processing technology; GaAs MESFET integrated circuits; GaAs digital integrated circuits; counter family; double pinchoff voltage technology; dual clocked frequency dividers; gate length; maximum toggle frequency; single-clocked frequency dividers; very high-speed frequency division;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810536
