Simple multiwavelength device fabrication technique using a single-grating holographic exposure

Author

Delorme, F. ; Grosmaire, S. ; Alibert, G. ; Slempkes, S. ; Ougazzaden, A.

Author_Institution

CNET, Bagneux, France

Volume

8

Issue

7

fYear

1996

fDate

7/1/1996 12:00:00 AM

Firstpage

867

Lastpage

869

Abstract

A simple technique, using a single-grating holographic exposure associated with localized selective etching steps, has been developed for multiwavelength device fabrication. Four-wavelength DBR laser arrays with a 5 nm Bragg wavelength spacing have been fabricated for wavelength division multiplexing (WDM) applications with this method. These devices exhibit uniformly low-threshold currents (10-15 mA), high-output powers (15 mW) and wide tunabilities (12 nm), leading to an overall accessible wavelength domain of 28 nm for the array.

Keywords

III-V semiconductors; distributed feedback lasers; etching; gallium arsenide; holographic gratings; indium compounds; laser tuning; optical communication equipment; optical fabrication; quantum well lasers; semiconductor laser arrays; wavelength division multiplexing; 10 to 15 mA; 15 mW; Bragg wavelength spacing; InGaAsP quantum well lasers; WDM; four-wavelength DBR laser arrays; high-output powers; localized selective etching steps; low-threshold currents; multiwavelength device fabrication technique; overall accessible wavelength domain; single-grating holographic exposure; wavelength division multiplexing; wide tunabilities; Arrayed waveguide gratings; Costs; Degradation; Distributed Bragg reflectors; Etching; Holography; Optical arrays; Optical device fabrication; Phased arrays; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.502253

Filename

502253