Title :
High K-value LDD GaAs MESFET´s with SiF3-implanted shallow channels
Author :
Tamura, Akiyoshi ; Watanabe, Atsushi ; Inoue, Kaoru
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fDate :
1/1/1990 12:00:00 AM
Abstract :
High K-value self-aligned GaAs MESFETs with a reduced short-channel effect that were developed using both shallow SiF3 -implanted channels annealed with a WSiN refractory metal cap and a lightly doped drain (LDD) structure are discussed. The 0.5-μm-gate device has a maximum transconductance of 360 mS/mm and a K-value of 504 mS/Vmm with a threshold voltage of 60 mV. The threshold voltage shift was only 90 mV when the gate length was reduced from 2.0 to 0.5 μm. In addition, more precise control of the threshold voltage was obtained
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; silicon compounds; 0.5 micron; 2.0 to 0.5 micron; 360 mS; 60 mV; GaAs:SiF3; WSiN refractory metal cap; gate length; high K-value LDD GaAs MESFET; lightly doped drain structure; shallow implanted channels; threshold voltage; transconductance; Annealing; Argon; Atmosphere; Crystals; FETs; Fabrication; Gallium arsenide; Gold; MESFETs; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
