High-voltage TFT fabricated in recrystallized polycrystalline silicon

Author

Unagami, Takashi ; Kogure, Osamu

Author_Institution

Electr. Commun. Labs., NTT, Kanagawa, Japan

Volume

35

Issue

3

fYear

1988

fDate

3/1/1988 12:00:00 AM

Firstpage

314

Lastpage

319

Abstract

High-voltage thin-film transistors (TFTs) fabricated using CW-Ar laser annealed polycrystalline silicon have an offset gate structure between the source and gate and between the gate and drain. The breakdown voltage, transconductance, and leakage current in various size TFTs are described. These TFTs exhibited n-channel enhancement characteristics with a low-threshold voltage, and a breakdown voltage above 100 V could be obtained at an offset gate length of 20 μm. Active TFT circuits were fabricated with these high-voltage Si TFTs. These high-voltage TFT circuits can drive thin-film EL (electroluminescent display) at low signal voltage

Keywords

electroluminescent displays; elemental semiconductors; leakage currents; power transistors; silicon; thin film transistors; 100 V; 20 micron; Ar laser annealing; active TFT circuits; breakdown voltage; electroluminescent display; gate length; high-voltage TFT circuits; leakage current; low-threshold voltage; n-channel enhancement characteristics; offset gate structure; recrystallised polycrystalline Si; transconductance; Annealing; Breakdown voltage; Displays; Drives; Electroluminescent devices; Leakage current; Silicon; Thin film circuits; Thin film transistors; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2457

Filename

2457