Title :
High-voltage TFT fabricated in recrystallized polycrystalline silicon
Author :
Unagami, Takashi ; Kogure, Osamu
Author_Institution :
Electr. Commun. Labs., NTT, Kanagawa, Japan
fDate :
3/1/1988 12:00:00 AM
Abstract :
High-voltage thin-film transistors (TFTs) fabricated using CW-Ar laser annealed polycrystalline silicon have an offset gate structure between the source and gate and between the gate and drain. The breakdown voltage, transconductance, and leakage current in various size TFTs are described. These TFTs exhibited n-channel enhancement characteristics with a low-threshold voltage, and a breakdown voltage above 100 V could be obtained at an offset gate length of 20 μm. Active TFT circuits were fabricated with these high-voltage Si TFTs. These high-voltage TFT circuits can drive thin-film EL (electroluminescent display) at low signal voltage
Keywords :
electroluminescent displays; elemental semiconductors; leakage currents; power transistors; silicon; thin film transistors; 100 V; 20 micron; Ar laser annealing; active TFT circuits; breakdown voltage; electroluminescent display; gate length; high-voltage TFT circuits; leakage current; low-threshold voltage; n-channel enhancement characteristics; offset gate structure; recrystallised polycrystalline Si; transconductance; Annealing; Breakdown voltage; Displays; Drives; Electroluminescent devices; Leakage current; Silicon; Thin film circuits; Thin film transistors; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
