DocumentCode
973929
Title
Electrons, Holes, and Traps
Author
Shockley, William
Author_Institution
Shockley Semiconductor Lab., Beckman Instruments, Inc., Mountain View, Calif.
Volume
46
Issue
6
fYear
1958
fDate
6/1/1958 12:00:00 AM
Firstpage
973
Lastpage
990
Abstract
The statistics of recombination and of trapping of electrons and holes through traps of a single species are presented. The results of the Shockley-Read recombination theory are derived and more fully interpreted. A level of energy known as the equality level is introduced. When the Fermi level lies at this level, the four basic processes of electron capture, electron emission, hole capture, and hole emission all proceed at equal rates. Transient cases for large trap density are presented.
Keywords
Charge carrier processes; Cooling; Electron traps; Germanium; P-n junctions; Radiative recombination; Semiconductor devices; Semiconductor diodes; Spontaneous emission; Statistics;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1958.286837
Filename
4065438
Link To Document