• DocumentCode
    973929
  • Title

    Electrons, Holes, and Traps

  • Author

    Shockley, William

  • Author_Institution
    Shockley Semiconductor Lab., Beckman Instruments, Inc., Mountain View, Calif.
  • Volume
    46
  • Issue
    6
  • fYear
    1958
  • fDate
    6/1/1958 12:00:00 AM
  • Firstpage
    973
  • Lastpage
    990
  • Abstract
    The statistics of recombination and of trapping of electrons and holes through traps of a single species are presented. The results of the Shockley-Read recombination theory are derived and more fully interpreted. A level of energy known as the equality level is introduced. When the Fermi level lies at this level, the four basic processes of electron capture, electron emission, hole capture, and hole emission all proceed at equal rates. Transient cases for large trap density are presented.
  • Keywords
    Charge carrier processes; Cooling; Electron traps; Germanium; P-n junctions; Radiative recombination; Semiconductor devices; Semiconductor diodes; Spontaneous emission; Statistics;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1958.286837
  • Filename
    4065438