Title :
Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology
Author :
Weinmann, R. ; Baums, D. ; Cebulla, U. ; Haisch, H. ; Kaiser, D. ; Kuhn, E. ; Lach, E. ; Satzke, K. ; Weber, J. ; Wiedemann, P. ; Zielinski, E.
Author_Institution :
Optelectron. Components Div., Alcatel Corp. Res. Centre, Stuttgart, Germany
fDate :
7/1/1996 12:00:00 AM
Abstract :
Electroabsorption modulators with polarization-independence of transmission (TE/TM sensitivity <0.4 dB at 1550 nm) over a wide wavelength range from 1540-1560 nm have been realized using tensile-strained InGaAs and InGaAsP quantum wells. Both designs show 42-GHz modulation bandwidth with a high bandwidth-to-drive-voltage ratio of >23 GHz/V. Polarization insensitivity of modulator transmission and chirp is demonstrated. Technical realization has been done in ridge waveguide technology with low-pressure MOVPE, reactive ion etching (RIE) for semiconductor etching and polyimide for planarization.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical waveguides; ridge waveguides; semiconductor quantum wells; 1540 to 1560 nm; 42 GHz; InGaAs; InGaAsP; bandwidth-to-drive-voltage ratio; chirp; electroabsorption modulator; low-pressure MOVPE; multiquantum-well deep-ridge waveguide technology; polarization-independent transmission; polyimide planarization; reactive ion etching; semiconductor; tensile-strained quantum wells; ultra-high modulation bandwidth; Bandwidth; Chirp modulation; Epitaxial growth; Epitaxial layers; Etching; Indium gallium arsenide; Planar waveguides; Polarization; Semiconductor waveguides; Tellurium;
Journal_Title :
Photonics Technology Letters, IEEE
