• DocumentCode
    973967
  • Title

    High power output InGaAsP/InP buried heterostructure lasers

  • Author

    Nakano, Yoshiaki ; Takahei, K. ; Noguchi, Y. ; Suzuki, Yuya ; Nagai, Hiroto ; Nawata, Koji

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    17
  • Issue
    21
  • fYear
    1981
  • Firstpage
    782
  • Lastpage
    783
  • Abstract
    A novel InGaAsP/InP buried heterostructure (BH) laser was fabricated on a p-InP substrate. This laser can provide a peak pulse output of 0.8 W per facet with a stable lateral transverse mode oscillation and enables the fault location measurement of a single mode fibre cable over 20 km.
  • Keywords
    III-V semiconductors; fault location; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; InGaAsP/InP buried heterostructure lasers; fault location measurement; optical communications; semiconductor lasers; stable lateral transverse mode oscillation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810548
  • Filename
    4246028
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=973967