Title :
Formation of Junction Structures by Solid-State Diffusion
Author_Institution :
Bell Telephone Labs., Inc., Murray Hill N.J.
fDate :
6/1/1958 12:00:00 AM
Abstract :
The diffusion of group III and group V impurities into germanium and silicon is reviewed. Observed and possible variations of the diffusion coefficient with concentration are discussed, followed by a summary of the diffusion coefficients and of solutions to the diffusion equation. Finally, methods for the evaluation of diffused layers and diffusion techniques are described.
Keywords :
Diffusion processes; Electrodes; Equations; Gallium arsenide; Germanium; Indium phosphide; Length measurement; P-n junctions; Silicon; Solid state circuits;
Journal_Title :
Proceedings of the IRE
DOI :
10.1109/JRPROC.1958.286843
