DocumentCode
974041
Title
Germanium and Silicon Rectifiers
Author
Kels, H. W Hien
Author_Institution
Westinghouse Electric Corp., Youngwood, Pa.
Volume
46
Issue
6
fYear
1958
fDate
6/1/1958 12:00:00 AM
Firstpage
1086
Lastpage
1098
Abstract
Two general types of rectifier are singled out for review in this paper. These are the silicon and germanium large area p-n junction rectifying cells. A discussion is given of various phenomena which have a bearing upon the volt-ampere characteristics. Methods for fabricating the various kinds of p-n junctions into rectifying cells are described and typical volt-ampere characteristics are given. Finally, a brief summary of the kinds of applications these rectifiers have filled is provided with some typical illustrations.
Keywords
Books; Germanium alloys; P-n junctions; Rectifiers; Schottky diodes; Semiconductor diodes; Senior members; Silicon; Surface treatment; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1958.286891
Filename
4065450
Link To Document