Title :
Germanium and Silicon Rectifiers
Author_Institution :
Westinghouse Electric Corp., Youngwood, Pa.
fDate :
6/1/1958 12:00:00 AM
Abstract :
Two general types of rectifier are singled out for review in this paper. These are the silicon and germanium large area p-n junction rectifying cells. A discussion is given of various phenomena which have a bearing upon the volt-ampere characteristics. Methods for fabricating the various kinds of p-n junctions into rectifying cells are described and typical volt-ampere characteristics are given. Finally, a brief summary of the kinds of applications these rectifiers have filled is provided with some typical illustrations.
Keywords :
Books; Germanium alloys; P-n junctions; Rectifiers; Schottky diodes; Semiconductor diodes; Senior members; Silicon; Surface treatment; Voltage;
Journal_Title :
Proceedings of the IRE
DOI :
10.1109/JRPROC.1958.286891
