Title :
External grating tunable MQW laser with wide tuning range of 240 nm
Author :
Tabuchi, H. ; Ishikawa, H.
Author_Institution :
Fujitsu Labs., Atsugi, Japan
fDate :
5/24/1990 12:00:00 AM
Abstract :
A very wide tuning range in an external grating tunable InGaAs-InGaAsP MQW laser is demonstrated. Second subband recombination occurs in MQW diode at high current density injection. This contributes to gain expansion and a tuning range of 240 nm was obtained when operated continuously (CW) at room temperature.
Keywords :
III-V semiconductors; diffraction gratings; gallium arsenide; gallium compounds; indium compounds; laser tuning; semiconductor junction lasers; CW operation; InGaAs-InGaAsP; external grating; gain expansion; high current density injection; room temperature; second subband recombination; semiconductor lasers; tunable MQW laser; wide tuning range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900484
