Title :
Application of feedback techniques to the realisation of hybrid and monolithic broadband low-noise-and-power GaAs FET amplifiers
Author_Institution :
Plessey Research (Caswell) Ltd., Towcester, UK
Abstract :
The implementation of ultrabroadband low-noise GaAs FET amplifiers operating up to 20 GHz is shown to be possible with the use of a low-parasitic high-gm device, which can only be implemented using monolithic circuit techniques. An example of a 0.1 to 6 GHz hybrid low-noise amplifier to illustrate the circuit technique is described.
Keywords :
III-V semiconductors; feedback; field effect integrated circuits; gallium arsenide; hybrid integrated circuits; microwave amplifiers; microwave integrated circuits; power amplifiers; wideband amplifiers; 0.1 to 6 GHz; 20 GHz; feedback techniques; high-maximum gain low-parasitic amplifier; hybrid devices; hybrid low-noise amplifier; microwave amplifier; monolithic amplifier; power amplifier; ultrabroadband low-noise GaAs FET amplifiers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810558
