Title :
A high-performance gate/base drive using a current source
Author :
Stielau, O.H. ; Schoeman, J.J. ; van Wyk, J.D.
Author_Institution :
Energy Lab., Rand Afrikaans Univ., Johannesburg, South Africa
Abstract :
The gate drive discussed achieves extremely fast turn-on times due to a current pulse applied to the gate. The gate/base current rise time is only a function of the turn-off time of a MOSFET, resulting in extremely fast rise times. The fundamental limits of the new drive are pointed out, including minimum off-time and maximum on-time. A loss analysis is also carried out. Experimental results verify the performance of the gate drive
Keywords :
driver circuits; losses; switching circuits; MOSFET; current pulse; current rise time; current source; fast turn-on times; gate/base drive; high-performance; loss analysis; maximum on-time; minimum off-time; switching circuits; turn-off time; Africa; Bipolar transistors; Drives; Industry Applications Society; MOSFET circuits; Power electronics; Power semiconductor switches; Semiconductor devices; Switching loss; Voltage control;
Journal_Title :
Industry Applications, IEEE Transactions on
