Title :
High field effect mobility in Si face 4H-SiC MOSFET transistors
Author :
Ólafsson, H. Ö ; Gudjónsson, G. ; Nilsson, Per-Ake ; Sveinbjörnsson, E. Ö ; Zirath, H. ; Rödle, T. ; Jos, R.
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
4/15/2004 12:00:00 AM
Abstract :
A report is made on field effect mobility of 150 cm2/Vs in lateral n-channel Si face 4H-SiC MOSFETs made by gate oxidation in N2O ambient. The high mobility is correlated with a two orders of magnitude reduction in density of interface states near the SiC conduction band edge when compared to gate oxides made in a wet or dry oxygen ambient.
Keywords :
MOSFET; conduction bands; electronic density of states; elemental semiconductors; high field effects; interface states; oxidation; silicon; silicon compounds; wide band gap semiconductors; MOSFET transistors; Si-SiC; SiC conduction band; dry oxygen; gate oxidation; high field effect mobility; interface state density; interface state magnitude reduction; n channel MOSFET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040351
