• DocumentCode
    974139
  • Title

    High field effect mobility in Si face 4H-SiC MOSFET transistors

  • Author

    Ólafsson, H. Ö ; Gudjónsson, G. ; Nilsson, Per-Ake ; Sveinbjörnsson, E. Ö ; Zirath, H. ; Rödle, T. ; Jos, R.

  • Author_Institution
    Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
  • Volume
    40
  • Issue
    8
  • fYear
    2004
  • fDate
    4/15/2004 12:00:00 AM
  • Firstpage
    508
  • Lastpage
    510
  • Abstract
    A report is made on field effect mobility of 150 cm2/Vs in lateral n-channel Si face 4H-SiC MOSFETs made by gate oxidation in N2O ambient. The high mobility is correlated with a two orders of magnitude reduction in density of interface states near the SiC conduction band edge when compared to gate oxides made in a wet or dry oxygen ambient.
  • Keywords
    MOSFET; conduction bands; electronic density of states; elemental semiconductors; high field effects; interface states; oxidation; silicon; silicon compounds; wide band gap semiconductors; MOSFET transistors; Si-SiC; SiC conduction band; dry oxygen; gate oxidation; high field effect mobility; interface state density; interface state magnitude reduction; n channel MOSFET;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040351
  • Filename
    1293651
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=974139