Title :
New laser structure on semi-insulating substrate, grown by MOCVD, for high speed operation
Author :
Blondeau, R. ; Rondi, D. ; Krakowski, M. ; Glastre, Genevieve ; Vilain, G.
Author_Institution :
Thompson CSF, Orsay, France
fDate :
3/29/1990 12:00:00 AM
Abstract :
High speed 1.3 and 1.5 mu m GaInAsP/InP BH lasers on SI InP substrate have been fabricated with very good performances. The 1.3 mu m lasers have threshold currents of about 10 mA and differential external efficiencies higher than 0.2 W/A. Small signal 3 dB modulation bandwidths as high as 15 GHz have been obtained with output optical power of about 15 mW.
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; 1.5 micron; 10 mA; 15 GHz; 15 mW; BH lasers; GaInAsP-InP lasers; InP; MOCVD; SI InP substrate; differential external efficiencies; high speed operation; laser structure; modulation bandwidths; output optical power; performances; semi-insulating substrate; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900297
