Title :
An improved approximation for the electron emission integral
Author :
Atti, Muhammad Taher Abuelma
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Bahrain Univ., Isa Town, Bahrain
fDate :
1/1/1990 12:00:00 AM
Abstract :
An approximation for the electron emission integral that is more accurate than previously published approximations is presented. The error in the new approximation is contained within 4.5% over the physical range of interest. The approximation can be easily implemented in computer-aided design and analysis as well as hand calculations using pocket calculators
Keywords :
circuit CAD; electron field emission; insulated gate field effect transistors; computer-aided design; electron emission integral; hand calculations; pocket calculators; Annealing; Cities and towns; Electron emission; Gallium arsenide; Instruction sets; Integral equations; Ion implantation; MESFETs; MOSFET circuits; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
