Title :
Differences of plasma formation and extraction in P+NN+ And N+PP+ silicon TRAPATT structures
Author :
Vaitiekunas, F. ; Vyshniauskas, J.
Author_Institution :
V. Kapsukas State University, Physics Department, Vilnius, USSR
Abstract :
The results obtained from the numerical simulation of P+NN+ and N+PP+ trapatt diodes show a considerable difference between processes of dynamic minority-carrier storage in these structures. The reasons for this difference are discussed. It is shown that the given analysis will be useful in the explanation of the experimentally observed superiority of N+PP+-type diodes.
Keywords :
TRAPATT diodes; minority carriers; semiconductor device models; solid-state plasma; Si TRAPATT structure; TRAPATT diodes; dynamic minority-carrier storage; n+-p-p+ structure; p+-n-n+ structure; plasma extraction; plasma formation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810573
