• DocumentCode
    974269
  • Title

    Properties of Silicon and Germanium: II

  • Author

    Conwell, E.M.

  • Author_Institution
    Sylvania Electric Products, Inc., Bayside, N.Y.
  • Volume
    46
  • Issue
    6
  • fYear
    1958
  • fDate
    6/1/1958 12:00:00 AM
  • Firstpage
    1281
  • Lastpage
    1300
  • Abstract
    This paper attempts to bring up to date the information on fundamental properties of silicon and germanium. Much the same topics are covered as in the author\´s earlier article "Properties of Silicon and Germanium" (henceforth referred to as I), which appeared in the 1952 Transistor Issue of PROCEEDINGS. Also included is some of the detailed knowledge on the band structure which has been obtained since 1952. This is essential to the understanding of many of the properties of these materials.
  • Keywords
    Bibliographies; Charge carrier processes; Conducting materials; Electrons; Germanium; Impurities; Optical materials; Optical surface waves; Silicon; Wave functions;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1958.286957
  • Filename
    4065473