Title :
Improved Electronic Performance of HfO2/ SiO2 Stacking Gate Dielectric on 4H SiC
Author :
Kuan Yew Cheong ; Moon, Jeong Hyun ; Park, Tae Joo ; Kim, Jeong Hwan ; Hwang, Cheol Seong ; Kim, Hyeong Joon ; Bahng, Wook ; Kim, Nam-Kyun
Author_Institution :
Univ. Sains Malaysia, Nibong Tebal
Abstract :
The MOS characteristics of an atomic layer-deposited HfO2/N2O-nitrided SiO2 stacking gate dielectric on n-type 4H SiC (0001) has been investigated. Three different thicknesses of nitrided SiO2 (2, 4, and 6 nm) have been sandwiched between HfO2 and SiC. The electronic performance of the stacking dielectric depends on the thickness of the nitrided SiO2. Among the stacking dielectrics, the lowest effective oxide charge and interface-trap density as well as the most reliable dielectric has been demonstrated by a sample with the thickest nitrided . The reason for this observation is proposed.
Keywords :
MIS devices; MOS capacitors; hafnium compounds; high-k dielectric thin films; interface states; silicon compounds; wide band gap semiconductors; 4H SiC (0001); HfO2-SiO2-SiC - Interface; MOS characteristics; effective oxide charge; electronic performance; interface-trap density; reliable dielectric; size 2 nm; size 4 nm; size 6 nm; stacking gate dielectric; Atomic layer deposition; Dielectric materials; Dielectric substrates; Hafnium oxide; Leakage current; Materials science and technology; Moon; Power engineering and energy; Silicon carbide; Stacking; High dielectric-constant gate; leakage current; nitridation; reliability;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.908545
