• DocumentCode
    974287
  • Title

    Self-aligned normally off GaAs MESFET using Sn-doped SiO2 glass

  • Author

    Ishii, Y. ; Kawasaki, Yoji

  • Author_Institution
    NTT, Electrical Communication Laboratories, Musashino, Japan
  • Volume
    17
  • Issue
    22
  • fYear
    1981
  • Firstpage
    834
  • Lastpage
    836
  • Abstract
    An improved normally-off GaAs MESFET was fabricated by employing Sn-doped SiO2 glass, which was used as an Sn-diffusant for making the N+ layer. An N+ layer with Rs=100$/¿ and Ns=3×1013 cm¿2 was successfully obtained under 800°C, 20 min diffusion conditions. A new self-alignment technique, using doped-SiO2 film, provided a high performance normally-off GaAs FET.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; glass; silicon compounds; tin; III-V semiconductors; SiO2:Sn glass; self-aligned normally-off GaAs MESFET;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810581
  • Filename
    4246062
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=974287