Title :
Self-aligned normally off GaAs MESFET using Sn-doped SiO2 glass
Author :
Ishii, Y. ; Kawasaki, Yoji
Author_Institution :
NTT, Electrical Communication Laboratories, Musashino, Japan
Abstract :
An improved normally-off GaAs MESFET was fabricated by employing Sn-doped SiO2 glass, which was used as an Sn-diffusant for making the N+ layer. An N+ layer with Rs=100$/¿ and Ns=3×1013 cm¿2 was successfully obtained under 800°C, 20 min diffusion conditions. A new self-alignment technique, using doped-SiO2 film, provided a high performance normally-off GaAs FET.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; glass; silicon compounds; tin; III-V semiconductors; SiO2:Sn glass; self-aligned normally-off GaAs MESFET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810581
