Abstract :
This paper presents a complete circuit-compatible compact model for single-walled carbon-nanotube field-effect transistors (CNFETs) as an extension to Part 1 of this two-part paper. For the first time, a universal circuit-compatible CNFET model including the practical device nonidealities is implemented with HSPICE. In addition to the nonidealities included in the companion paper, this paper includes the elastic scattering in the channel region, the resistive source/drain (S/D), the Schottky-barrier resistance, and the parasitic gate capacitances. More than one nanotube per device can be modeled. Compared to silicon technology, the CNFETs show much better device performance based on the intrinsic gate-delay metric (six times for nFET and 14 times for pFET) than the MOSFET device at the 32-nm node, even with device nonidealities. This large speed improvement is significantly degraded (by a factor of five to eight) by interconnect capacitance in a real circuit environment. We performed circuit-performance comparison with all the standard digital library cells between CMOS random logic and CNFET random logic with HSPICE simulation. Compared to CMOS circuits, the CNFET circuits with one to ten carbon nanotubes per device is about two to ten times faster, the energy consumption per cycle is about seven to two times lower, and the energy-delay product is about 15-20 times lower, considering the realistic layout pattern and the interconnect wiring capacitance.
Keywords :
SPICE; carbon nanotubes; circuit simulation; field effect logic circuits; field effect transistors; integrated circuit interconnections; nanoelectronics; semiconductor device models; CMOS random logic; CNFET; CNFET random logic; HSPICE; MOSFET device; Schottky-barrier resistance; circuit performance benchmarking; compact SPICE model; complete circuit-compatible compact model; device performance; elastic scattering; energy consumption; energy-delay product; full device model; interconnect wiring capacitance; intrinsic gate-delay metric; parasitic gate capacitances; practical device nonidealities; resistive source-drain; silicon technology; single-walled carbon-nanotube field-effect transistors; size 32 nm; standard digital library cells; universal circuit-compatible CNFET model; CMOS logic circuits; CNTFETs; Circuit optimization; Integrated circuit interconnections; Logic devices; Nanoscale devices; Parasitic capacitance; SPICE; Scattering; Silicon; Analytical model; SPICE; carbon nanotube (CNT); carbon-nanotube field-effect transistor (CNFET); compact model; performance benchmarking; screening effect;
