DocumentCode
974308
Title
Temperature dependence of peak heights in deep-level transient spectroscopy
Author
Rockett, P.I. ; Peaker, A.R.
Author_Institution
University of Manchester Institute of Science & Technology, Department of Electrical Engineering & Electronics, Manchester, UK
Volume
17
Issue
22
fYear
1981
Firstpage
838
Lastpage
839
Abstract
With the aid of a high precision computer simulation we demonstrate that the frequently observed variation in DLTS peak height with emission rate window is not necessarily caused by nonexponential capacitance transients as is often supposed, but rather by the change in shape of the Debye tail with temperature. This variation in peak height is shown to be a function of temperature, reverse bias and trap depth.
Keywords
Schottky-barrier diodes; deep level transient spectroscopy; deep levels; digital simulation; Debye tail; Schottky diodes; computer simulation; deep-level transient spectroscopy; emission rate window; nonexponential capacitance transients; peak heights;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810583
Filename
4246064
Link To Document