• DocumentCode
    974317
  • Title

    Undoped semi-insulating LEC GaAs: a model and a mechanism

  • Author

    Oliver, J.R. ; Fairman, R.D. ; Chen, Ray T. ; Yu, P.W.

  • Author_Institution
    Rockwell International, Microelectronics Research and Development Center, Thousand Oaks, USA
  • Volume
    17
  • Issue
    22
  • fYear
    1981
  • Firstpage
    839
  • Lastpage
    841
  • Abstract
    Undoped semi-insulating GaAs grown by the high-pressure liquid encapsulated Czochralski (LEC) method has been produced for use in direct ion implantation in several laboratories.1¿4 A clear understanding of the factors controlling impurity transport and compensation in these materials has been lacking to date. In this work, detailed characterisation has been performed on undoped semi-insulating crystals grown from both SiO2 and PBN crucibles followed by a proposed impurity model and compensation mechanism.
  • Keywords
    III-V semiconductors; crystal growth from melt; gallium arsenide; impurity distribution; ion implantation; III-V semiconductor; PBN crucibles; SiO2; compensation mechanism; impurity model; impurity transport; ion implantation; liquid encapsulated Czochralski method; secondary ion mass spectrometry; undoped semi-insulating GaAs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810584
  • Filename
    4246065
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=974317