Title :
Undoped semi-insulating LEC GaAs: a model and a mechanism
Author :
Oliver, J.R. ; Fairman, R.D. ; Chen, Ray T. ; Yu, P.W.
Author_Institution :
Rockwell International, Microelectronics Research and Development Center, Thousand Oaks, USA
Abstract :
Undoped semi-insulating GaAs grown by the high-pressure liquid encapsulated Czochralski (LEC) method has been produced for use in direct ion implantation in several laboratories.1¿4 A clear understanding of the factors controlling impurity transport and compensation in these materials has been lacking to date. In this work, detailed characterisation has been performed on undoped semi-insulating crystals grown from both SiO2 and PBN crucibles followed by a proposed impurity model and compensation mechanism.
Keywords :
III-V semiconductors; crystal growth from melt; gallium arsenide; impurity distribution; ion implantation; III-V semiconductor; PBN crucibles; SiO2; compensation mechanism; impurity model; impurity transport; ion implantation; liquid encapsulated Czochralski method; secondary ion mass spectrometry; undoped semi-insulating GaAs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810584
