Title :
Sidewall effects in shallow emitter of small bipolar transistor
Author :
Eltoukhy, A.A. ; Roulston, D.J.
Author_Institution :
University of Waterloo, Department of Electrical Engineering, Waterloo, Canada
Abstract :
The current injected into a shallow emitter is studied using a two-dimensional numerical solution of the transport equations, including the effects of bandgap reduction, lifetime and surface recombination velocity. The present results show clearly the correlation between the injected current and the bowl-shaped emitter area as well as the width of metal contact.
Keywords :
bipolar transistors; semiconductor device models; bandgap reduction; bipolar transistor; lifetime; shallow emitter; sidewall effects; surface recombination velocity; transport equations; two-dimensional numerical solution;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810588
