DocumentCode
974479
Title
Use of a methane/hydrogen plasma for gate recessing of E/D MESFETs
Author
Pereira, Rui ; Van Hove, Marleen ; de Potter, M. ; Van Rossum, M.
Author_Institution
Interuniv. Microelectron. Center, Kapeldreef, Belgium
Volume
26
Issue
7
fYear
1990
fDate
3/29/1990 12:00:00 AM
Firstpage
462
Lastpage
464
Abstract
A methane/hydrogen plasma has been used for the gate recessing of E/D MESFETs. Source-drain resistance measurements after thermal annealing have been performed on gate-recessed FETs without gate metal to check for the recovery of the electrical degradation introduced by the plasma. It was found that the damage could be restored after annealing at 350 degrees C.
Keywords
III-V semiconductors; Schottky gate field effect transistors; annealing; gallium arsenide; sputter etching; 350 C; E/D MESFETs; GaAs etching; electrical degradation recovery; gate recess etching; gate recessing; gate-recessed FETs; methane-H 2 plasma; plasma etching; thermal annealing;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900300
Filename
50231
Link To Document