Title :
Use of a methane/hydrogen plasma for gate recessing of E/D MESFETs
Author :
Pereira, Rui ; Van Hove, Marleen ; de Potter, M. ; Van Rossum, M.
Author_Institution :
Interuniv. Microelectron. Center, Kapeldreef, Belgium
fDate :
3/29/1990 12:00:00 AM
Abstract :
A methane/hydrogen plasma has been used for the gate recessing of E/D MESFETs. Source-drain resistance measurements after thermal annealing have been performed on gate-recessed FETs without gate metal to check for the recovery of the electrical degradation introduced by the plasma. It was found that the damage could be restored after annealing at 350 degrees C.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; annealing; gallium arsenide; sputter etching; 350 C; E/D MESFETs; GaAs etching; electrical degradation recovery; gate recess etching; gate recessing; gate-recessed FETs; methane-H 2 plasma; plasma etching; thermal annealing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900300
