• DocumentCode
    974512
  • Title

    Strained Si/SiGe Channel With Buried \\hbox {Si}_{0.99}\\hbox {C}_{0.01} for Improved Drivability, Gate Stack Integrity and Noise Performance

  • Author

    Loh, Wei-Yip ; Zang, Hui ; Oh, Hoon-Jung ; Choi, Kyu-Jin ; Nguyen, Hoai Son ; Lo, Guo-Qiang ; Cho, Byung Jin

  • Author_Institution
    Inst. of Microelectron., Singapore
  • Volume
    54
  • Issue
    12
  • fYear
    2007
  • Firstpage
    3292
  • Lastpage
    3298
  • Abstract
    We report a novel Si/Si1-xGex channel with improved noise, current drivability, and reliability using a buried Si0.99C0.01 which can induce higher channel strain for the same Ge concentration. High-k dielectrics on Si/Si1-xGex. with buried Si0.99C0.01 show lower charge trapping, better leakage current distribution and less ftathand voltage shift. Si/Si1-xGex. channel p-MOSFET with the buried Si0.99C0.01 shows drive current improvement of up to 20% and better noise immunity.
  • Keywords
    Ge-Si alloys; MOSFET; elemental semiconductors; high-k dielectric thin films; silicon; silicon compounds; wide band gap semiconductors; MOSFET; Si-SiGe; SiC; charge trapping; current drivability; flatband voltage shift; gate stack integrity; high k dielectrics; leakage current distribution; noise performance; strained channel; Capacitive sensors; Dielectrics; Germanium silicon alloys; Laboratories; Lattices; MOSFET circuits; Microelectronics; Silicon carbide; Silicon germanium; Thermal stability; Carbon; MOSFETs; SiGe; field-effect transistor; heterostructure; mobility; silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2007.908599
  • Filename
    4383042
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=974512