Enhanced mobility in inverted AlxGa1Â¿xAs/GaAs heterojunctions: binary on top of ternary

Author

Drummond, T.J. ; Morko¿¿, H. ; Su, S.L. ; Fischer, Ray ; Cho, Andrew Y.

Author_Institution

University of Illinois, Department of Electrical Engineering and Co-ordinated Science Laboratory, Urbana, USA

Volume

17

Issue

23

fYear

1981

Firstpage

870

Lastpage

871

Abstract

Single-period modulation doped inverted Al0.18Ga0.82As/GaAs heterostructures having the binary on top of the ternary were grown by molecular beam epitaxy. Despite the early reports of no mobility enhancement, considerable mobility enhancement, particularly at cryogenic temperatures, were obtained in the present structures. Mobilities of about 27 600 cm2/Vs with associated sheet carrier concentrations of about 6Ã—1011 cmÂ¿2 were obtained at 10 K. The results represent the first enhanced mobilities obtained by molecular beam epitaxy and compare with 25 600 cm2/Vs deduced from Shubnikov de Haas measurements in LPE-grown structures at 4 K.

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; p-n heterojunctions; 10K; 27600 cm2 per Vs mobility; 6 cm-2 sheet carrier concentration; Al0.18Ga0.82As/GaAs; cryogenic temperatures; inverted AlxGa1-xAs/GaAs heterojunctions; mobility enhancement; molecular beam epitaxy; semiconductor;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19810607

Filename

4246089