Title :
Selective carrier removal using oxygen implantation in GaAs
Author :
Berth, M. ; Venger, C. ; Martin, G.M.
Author_Institution :
Laboratoires d´Electronique et de Physique Appliquée, Limeil-Brévannes, France
Abstract :
It has been reported that free-carrier compensation can be achieved using oxygen implantation and can remain stable even after annealing at temperatures up to 900°C. It is demonstrated that carrier removal rate is drastically dependent on the initial donor species. It is very likely that carrier removal in Si-doped layers takes place via formation of Si-O complexes.
Keywords :
III-V semiconductors; carrier density; gallium arsenide; ion implantation; oxygen; semiconductor doping; 900 degrees C annealing; GaAs; O2 implantation; Si-O complexes; Si-doped layers; carrier removal; free-carrier compensation; semiconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810609
