• DocumentCode
    974557
  • Title

    Selective carrier removal using oxygen implantation in GaAs

  • Author

    Berth, M. ; Venger, C. ; Martin, G.M.

  • Author_Institution
    Laboratoires d´Electronique et de Physique Appliquée, Limeil-Brévannes, France
  • Volume
    17
  • Issue
    23
  • fYear
    1981
  • Firstpage
    873
  • Lastpage
    874
  • Abstract
    It has been reported that free-carrier compensation can be achieved using oxygen implantation and can remain stable even after annealing at temperatures up to 900°C. It is demonstrated that carrier removal rate is drastically dependent on the initial donor species. It is very likely that carrier removal in Si-doped layers takes place via formation of Si-O complexes.
  • Keywords
    III-V semiconductors; carrier density; gallium arsenide; ion implantation; oxygen; semiconductor doping; 900 degrees C annealing; GaAs; O2 implantation; Si-O complexes; Si-doped layers; carrier removal; free-carrier compensation; semiconductor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810609
  • Filename
    4246091
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=974557