Title :
Carrier-induced MESFET optical switches for photonic integration
Author :
Gautam, D.K. ; Ishida, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd, Tokyo, Japan
fDate :
10/1/1993 12:00:00 AM
Abstract :
A study is made of the reverse-biased optical switches in a MESFET geometry. Carriers are controlled in the switching region by the gate voltage which can enhance the feasibility of carrier-induced devices in high-speed data communication, optical computing and photonic switching. A waveguide optical switch in a conventional MESFET geometry is proposed which gives an extinction ratio better than 8.75 dB at the operating voltage of 7 V. A further optimised structure to reduce the operating voltage and get better optical characteristics has been designed. Computer analysis of the two-dimensional electrostatic potential and the number of depleted carriers shows that diffused carriers are depleted by applying drain and gate voltages of 2 and -2 V, respectively. The beam propagation method applied to wave propagation shows an on/off ratio better than 15 dB. This considerably improves both electrical and optical characteristics of carrier injection-type optical switches
Keywords :
Schottky gate field effect transistors; carrier mobility; electro-optical devices; field effect integrated circuits; integrated optics; integrated optoelectronics; optical switches; optical waveguides; semiconductor switches; 2D electrostatic potential; 7 V; beam propagation method; carrier-induced MESFET optical switches; carrier-induced devices; depleted carriers; diffused carriers; drain voltages; electrical characteristics; extinction ratio; gate voltage; high-speed data communication; on/off ratio; operating voltage; optical characteristics; optical computing; optimised structure; photonic integration; photonic switching; reverse-biased optical switches; switching region; wave propagation; waveguide optical switch;
Journal_Title :
Optoelectronics, IEE Proceedings J
