Title :
Effect of energy relaxation on injected current pulse in high-frequency IMPATT diodes
Author :
Lippens, Didier ; Constant, Eric
Author_Institution :
Université de Lille I, Centre Hyperfréquences et Semiconducteurs, LA CNRS 287, Villeneuve d´Ascq, France
Abstract :
The effect of energy relaxation on carrier injection in millimetre-wave IMPATT diodes is considered. For this purpose, an approximate formula relating the current pulse injected in the transit region, including the energy relaxation, is derived. Its influence on the RF impedance of the impatt oscillator is discussed.
Keywords :
IMPATT diodes; carrier mobility; impact ionisation; IMPATT oscillator; RF impedance; carrier injection; energy relaxation; high-frequency IMPATT diodes; injected current pulse; microwave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810612
