• DocumentCode
    974593
  • Title

    Optical switching in the twin-guide travelling-wave laser amplifier

  • Author

    Atkin, D.M. ; Adams, M.J.

  • Author_Institution
    Dept. of Electron., Southampton Univ., UK
  • Volume
    140
  • Issue
    5
  • fYear
    1993
  • fDate
    10/1/1993 12:00:00 AM
  • Firstpage
    296
  • Lastpage
    300
  • Abstract
    Detailed calculations have been made of the optical switching behaviour in twin-guide travelling-wave laser amplifiers driven with equal current in each guide. For typical device parameters, appropriate to 1.55 μm InGaAsP devices, the analysis indicates that the switching occurs at about one quarter of the saturated power, which in practice means at about 1 mW for an unsaturated gain of 26 dB. The factors influencing this switching power are discussed and some suggestions offered as to ways of reducing the value
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical switches; optical waveguides; semiconductor lasers; semiconductor switches; 1 mW; 1.55 μm; 1.55 mum; 26 dB; InGaAsP; device parameters; equal current; optical switching; saturated power; semiconductor laser diodes; switching power; twin-guide travelling-wave laser amplifier; unsaturated gain;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings J
  • Publisher
    iet
  • ISSN
    0267-3932
  • Type

    jour

  • Filename
    245791