Title :
Low threshold highly efficient strained quantum well lasers at 1.5 micrometre wavelength
Author :
Koren, U. ; Oron, M. ; Young, Matthew G. ; Miller, B.I. ; de Miguel, J.L. ; Raybon, G. ; Chien, M.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
3/29/1990 12:00:00 AM
Abstract :
Low threshold and high efficiency operation of strained layer multiple quantum well InGaAs-InGaAsP lasers at 1.5 micrometres wavelength is demonstrated. Current thresholds as low as 2.2 mA with threshold current densities of 440 A/cm2 have been obtained. With 7.3 mA threshold current, quantum efficiency was 65%/front facet. At 20 mW CW output power the drive current was as low as 53 mA.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; 1.5 micron; 2.2 mA; 20 mW; 53 mA; 65 percent; 7.3 mA; CW output power; III-V semiconductors; InGaAs-InGaAsP lasers; high efficiency operation; low threshold type; multiple quantum well; quantum efficiency; semiconductor lasers; strained quantum well lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900302
