• DocumentCode
    974723
  • Title

    Low threshold highly efficient strained quantum well lasers at 1.5 micrometre wavelength

  • Author

    Koren, U. ; Oron, M. ; Young, Matthew G. ; Miller, B.I. ; de Miguel, J.L. ; Raybon, G. ; Chien, M.

  • Author_Institution
    AT&T Bell Labs., Holmdel, NJ, USA
  • Volume
    26
  • Issue
    7
  • fYear
    1990
  • fDate
    3/29/1990 12:00:00 AM
  • Firstpage
    465
  • Lastpage
    467
  • Abstract
    Low threshold and high efficiency operation of strained layer multiple quantum well InGaAs-InGaAsP lasers at 1.5 micrometres wavelength is demonstrated. Current thresholds as low as 2.2 mA with threshold current densities of 440 A/cm2 have been obtained. With 7.3 mA threshold current, quantum efficiency was 65%/front facet. At 20 mW CW output power the drive current was as low as 53 mA.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; 1.5 micron; 2.2 mA; 20 mW; 53 mA; 65 percent; 7.3 mA; CW output power; III-V semiconductors; InGaAs-InGaAsP lasers; high efficiency operation; low threshold type; multiple quantum well; quantum efficiency; semiconductor lasers; strained quantum well lasers; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900302
  • Filename
    50233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=974723