DocumentCode
974747
Title
Optically frequency modulated GaAs MESFET oscillator
Author
Loriou, B. ; Guena, J. ; Sautereau, J.F.
Author_Institution
Centre National d´´Etudes des Télécommunications, Lannion, France
Volume
17
Issue
24
fYear
1981
Firstpage
901
Lastpage
902
Abstract
A GaAs MESFET X-band oscillator has been frequency modulated by an amplitude modulated optical signal injected on the active device. A modulation index of 0.5 corresponding to MSK modulation has been achieved at 2 Mbit/s without parasitic amplitude modulation. It is shown that the FM modulation index variation against frequency is directly related to the drain current response of the FET considered as a photodetector. This responsivity has been measured to decrease above 5 MHz, which limits the oscillator FM capability.
Keywords
III-V semiconductors; Schottky gate field effect transistors; field effect transistor circuits; frequency modulation; gallium arsenide; microwave oscillators; solid-state microwave circuits; 0.5 modulation index; 2 Mbit per sec; 5 MHz responsivity; FM modulation index; GaAs MESFET X-band oscillator; HF responsivity; MSK modulation; microwave oscillator; minimum shift keying modulation; optically frequency modulated;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810628
Filename
4246111
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