DocumentCode :
974758
Title :
Waveguide cavity FET oscillator
Author :
Materka, Andrzej ; Mizushina, S.
Author_Institution :
Shizuoka University, Research Institute of Electronics, Hamamatsu, Japan
Volume :
17
Issue :
24
fYear :
1981
Firstpage :
902
Lastpage :
904
Abstract :
A new single-tuned oscillator, applicable to power combining circuits, is described in which a probe antenna is used to provide coupling between an active device and the cavity. It is shown that output power, oscillation frequency and injection locking range of the oscillator can be controlled independently in the circuit design. The experiments with low-power FET oscillators demonstrate output power of 44 mW at 9.2 GHz and DC-RF conversion efficiency of 33.2% from a single-device oscillator and about 100% of power combining efficiency in the case of two- and three-device circuits.
Keywords :
cavity resonators; field effect transistor circuits; gallium arsenide; microwave oscillators; solid-state microwave circuits; 44 mV output power; 9.2 GHz; GaAs; SHF; active device; coupling; low-power FET oscillators; microwave oscillators; probe antenna; single-tuned oscillator; waveguide cavity FET oscillator;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19810629
Filename :
4246112
Link To Document :
بازگشت