Design of the Injection Bump System of the 3-GeV RCS in J-PARC

Author

Takayanagi, T. ; Kamiya, J. ; Watanabe, M. ; Yamazaki, Y. ; Irie, Y. ; Kishiro, J. ; Sakai, I. ; Kawakubo, T.

Author_Institution

JAERI, Ibaraki

Volume

16

Issue

2

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

1358

Lastpage

1361

Abstract

The injection bump system of the 3-GeV RCS (Rapid Cycling Synchrotron) in J-PARC (Japan Proton Accelerator Research Complex) consists of the pulse bending magnets for the injection bump orbit, which are four horizontal bending magnets (shift bump), four horizontal painting magnets (h-paint bump) and two vertical painting magnets (v-paint bump). The shift bump magnets, which are connected in series in order to form a closed bump orbit. The injection bump system needs the power supplies with the high speed and flexible current pattern. Furthermore, the tracking error is required less than 1.0% for 1.0 mus pulse current. The power supplies with the IGBT (Insulated Gate Bipolar Transistor) chopper units, which are controlled by the switching frequency over 60 kHz, realize its performance. The decay time of the shift bump power supply is less than 200 microseconds

Keywords

accelerator RF systems; accelerator magnets; insulated gate bipolar transistors; particle beam injection; proton accelerators; superconducting magnets; synchrotrons; 3 GeV; 60 kHz; IGBT; J-PARC; Japan Proton Accelerator Research Complex; RCS; decay time; h-paint bump; horizontal bending magnets; horizontal painting magnets; injection bump orbit; injection bump system design; insulated gate bipolar transistor chopper units; pulse bending magnets; rapid cycling synchrotron; shift bump power supply; switching frequency; tracking error; v-paint bump; vertical painting magnets; Choppers; Current supplies; Insulated gate bipolar transistors; Insulation life; Magnets; Painting; Power supplies; Proton accelerators; Pulsed power supplies; Synchrotrons;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/TASC.2005.864361

Filename

1643104