Title :
Ultrabroadband GaAs monolithic amplifier
Author :
Honjo, K. ; Sugiura, T. ; Itoh, H.
Author_Institution :
Nippon Electric Co. Ltd., Basic Technology Research Laboratories, Kawasaki, Japan
Abstract :
A 500 kHz¿2.8 GHz, 13.5 dB GaAs monolithic amplifier has been developed for gigabit baseband pulse amplification. Input VSWR was reduced using inter-gate-drain negative feedback. The interstage circuit is a DC coupled circuit consisting of a high impedance transmission line.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; monolithic integrated circuits; radiofrequency amplifiers; wideband amplifiers; 13.5 dB gain; 500 kHz to 2.8 gHz bandwidth; GaAs monolithic amplifier; HF; MF; UHF; VHF; VSWR; gigabit baseband pulse amplification; high impedance transmission line; inter-gate-drain negative feedback; monolithic ICs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810646
