• DocumentCode
    974932
  • Title

    Ultrabroadband GaAs monolithic amplifier

  • Author

    Honjo, K. ; Sugiura, T. ; Itoh, H.

  • Author_Institution
    Nippon Electric Co. Ltd., Basic Technology Research Laboratories, Kawasaki, Japan
  • Volume
    17
  • Issue
    24
  • fYear
    1981
  • Firstpage
    927
  • Lastpage
    928
  • Abstract
    A 500 kHz¿2.8 GHz, 13.5 dB GaAs monolithic amplifier has been developed for gigabit baseband pulse amplification. Input VSWR was reduced using inter-gate-drain negative feedback. The interstage circuit is a DC coupled circuit consisting of a high impedance transmission line.
  • Keywords
    III-V semiconductors; field effect integrated circuits; gallium arsenide; monolithic integrated circuits; radiofrequency amplifiers; wideband amplifiers; 13.5 dB gain; 500 kHz to 2.8 gHz bandwidth; GaAs monolithic amplifier; HF; MF; UHF; VHF; VSWR; gigabit baseband pulse amplification; high impedance transmission line; inter-gate-drain negative feedback; monolithic ICs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810646
  • Filename
    4246129
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=974932