Title :
4 Gbit/s pseudo-noise generator using GaAs MESFETs
Author :
Henry, M. ; Baron, J.L.
Author_Institution :
CNET, LAB/MER/MLS, Lannion, France
Abstract :
A multiplexing gate using GaAs MESFETs is described and operation up to 4 Gbit/s is demonstrated. A 2 Gbit/s pseudo-noise generator which can deliver NRZ or RZ signals has been implemented with this circuit; the corresponding output sequences are shown.
Keywords :
Schottky gate field effect transistors; field effect transistor circuits; gallium arsenide; noise generators; 4 Gbit per sec; GaAs MESFET; multiplexing gate; non-return to zero signals; pseudo-noise generator; return to zero signals;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810647
