DocumentCode
974947
Title
4 Gbit/s pseudo-noise generator using GaAs MESFETs
Author
Henry, M. ; Baron, J.L.
Author_Institution
CNET, LAB/MER/MLS, Lannion, France
Volume
17
Issue
24
fYear
1981
Firstpage
928
Lastpage
929
Abstract
A multiplexing gate using GaAs MESFETs is described and operation up to 4 Gbit/s is demonstrated. A 2 Gbit/s pseudo-noise generator which can deliver NRZ or RZ signals has been implemented with this circuit; the corresponding output sequences are shown.
Keywords
Schottky gate field effect transistors; field effect transistor circuits; gallium arsenide; noise generators; 4 Gbit per sec; GaAs MESFET; multiplexing gate; non-return to zero signals; pseudo-noise generator; return to zero signals;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810647
Filename
4246130
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