Title :
Cross-tie slow-wave coplanar waveguide on semi-insulating GaAs substrates
Author :
Seki, S. ; Hasegawa, H.
Author_Institution :
Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan
Abstract :
A new slow-wave coplanar waveguide on a semi-insulating GaAs substrate is described. The waveguide utilises a novel `cross-tie¿ periodic structure, consisting of lossless media. A simple analysis and experiments show linear dispersion with 10 to 40 times reduction of wavelength. The line appears useful for miniaturisation of distributed circuits in GaAs monolithic microwave integrated circuits.
Keywords :
III-V semiconductors; gallium arsenide; microwave integrated circuits; substrates; waveguides; III-V semiconductor; cross-tie slow-wave coplanar waveguide; linear dispersion; monolithic microwave integrated circuits; semiinsulating GaAs substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810657
