• DocumentCode
    975095
  • Title

    Ion-implanted E/D-type GaAs IC technology

  • Author

    Furutsuka, T. ; Tsuji, Takao ; Katano, F. ; Higashisaka, A. ; Kurumada, K.

  • Author_Institution
    Nippon Electric Co. Ltd., Basic Technology Research Laboratories, Kawasaki, Japan
  • Volume
    17
  • Issue
    25
  • fYear
    1981
  • Firstpage
    944
  • Lastpage
    945
  • Abstract
    An enhancement/depletion-type GaAs MESFET IC technology has been developed using selective ion implantation into SI GaAs. By reducing the source-gate and the drain-gate spacings down to about 0.4 ¿m, the unfavourable effect of the surface state1 was effectively lowered, while guaranteeing sufficient breakdown voltages. The minimum propagation delay of 66 ps was achieved in a 15-stage ring oscillator with 1.2 ¿m-long gate FETs.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; ion implantation; large scale integration; III-V semiconductor; LSI; enhancement/depletion-type GaAs MESFET IC technology; propagation delay; ring oscillator; selective ion implantation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810660
  • Filename
    4246144
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975095