DocumentCode
975110
Title
The Reactatron-A Low-Noise, Semiconductor Diode, Microwave Amplifier
Author
Brand, F.A. ; Matthei, W.G. ; Saad, T.
Author_Institution
U. S. Army Signal Research and Development Lab., Fort Monmouth, N.J.
Volume
47
Issue
1
fYear
1959
Firstpage
42
Lastpage
44
Abstract
A low-noise, microwave amplifier has been constructed using two non-linear capacitor microwave p-n junction diodes in a balanced hybrid system. Power gains in excess of 30 db with effective input noise temperatures less than 290°K have been observed at a frequency of 2900 mc.
Keywords
Contracts; Frequency; Low-noise amplifiers; Microwave amplifiers; Microwave devices; Operational amplifiers; Power amplifiers; Rectifiers; Semiconductor diodes; Semiconductor optical amplifiers;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1959.287106
Filename
4065562
Link To Document