DocumentCode :
975110
Title :
The Reactatron-A Low-Noise, Semiconductor Diode, Microwave Amplifier
Author :
Brand, F.A. ; Matthei, W.G. ; Saad, T.
Author_Institution :
U. S. Army Signal Research and Development Lab., Fort Monmouth, N.J.
Volume :
47
Issue :
1
fYear :
1959
Firstpage :
42
Lastpage :
44
Abstract :
A low-noise, microwave amplifier has been constructed using two non-linear capacitor microwave p-n junction diodes in a balanced hybrid system. Power gains in excess of 30 db with effective input noise temperatures less than 290°K have been observed at a frequency of 2900 mc.
Keywords :
Contracts; Frequency; Low-noise amplifiers; Microwave amplifiers; Microwave devices; Operational amplifiers; Power amplifiers; Rectifiers; Semiconductor diodes; Semiconductor optical amplifiers;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1959.287106
Filename :
4065562
Link To Document :
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