• DocumentCode
    975110
  • Title

    The Reactatron-A Low-Noise, Semiconductor Diode, Microwave Amplifier

  • Author

    Brand, F.A. ; Matthei, W.G. ; Saad, T.

  • Author_Institution
    U. S. Army Signal Research and Development Lab., Fort Monmouth, N.J.
  • Volume
    47
  • Issue
    1
  • fYear
    1959
  • Firstpage
    42
  • Lastpage
    44
  • Abstract
    A low-noise, microwave amplifier has been constructed using two non-linear capacitor microwave p-n junction diodes in a balanced hybrid system. Power gains in excess of 30 db with effective input noise temperatures less than 290°K have been observed at a frequency of 2900 mc.
  • Keywords
    Contracts; Frequency; Low-noise amplifiers; Microwave amplifiers; Microwave devices; Operational amplifiers; Power amplifiers; Rectifiers; Semiconductor diodes; Semiconductor optical amplifiers;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1959.287106
  • Filename
    4065562