Title :
Low-noise 10.7 GHz cooled GaAs FET amplifier
Author :
Tomassetti, Giordano ; Weinreb, S. ; Wellington, K.
Author_Institution :
Consiglio Nazionale delle Ricerche, Istituto di Radioastronomia, Bologna, Italy
Abstract :
A three-stage gallium-arsenide field-effect transistor amplifier giving a noise temperature of 29 K (0.4 dB noise figure) at a physical temperature of 13 K is described. The amplifier utilises a novel modular construction with coaxial air-lines, sliding ¿/4 transformers, and packaged NE13783 and MGF1403 FETs. Noise parameters of these devices at 300 K and 13 K are reported.
Keywords :
III-V semiconductors; field effect transistor circuits; gallium arsenide; microwave amplifiers; solid-state microwave circuits; 29K; III-V semiconductor; coaxial air-lines; low-noise 10.7 GHz cooled GaAs FET amplifier; noise temperature; physical temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810664
